SiC Device Process Development Leader

Background

In our power semiconductor business we are focusing on IGBTs and Power MOSFETs for the rapidly growing xEV market and are increasing our production capacity to meet the strong demand. In addition to these we are planning to develop higher performance SiC MOSFETs and launch them in the market as soon as possible. We are looking for engineers who can lead the development of nextgeneration SiC devices superior to competitors with our device and process engineers who are leading the field.

1. Wafer process development project management from concept study to mass production technology establishment
   
2. Collaboration and negotiation with related companies
   
3. Direction on device structure design and process flow construction.
   
4. Coordination and negotiation with various departments such as element process technology (frontside/backside process) business quality assurance etc.
   

Location

TakasakiCity GunmaPre

Required

• 2 years experience in project management of power device development
  
• 3 years experience in SiC device structure design and process development
  
• 3 years experience in 150mm or 200mm wafer process development
  

Nice to have

• Experience with using TCAD
  
• Expertise on IGBT SiC module packaging.
  
• Expertise on inverter system.
  

Language Skills

• English business level (TOEIC score around 700)
  
• Japanese business level JLPT score: N1)