drjobs Sr Device Process Engineer of GaN

Sr Device Process Engineer of GaN

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1 Vacancy
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Job Location drjobs

San Jose - USA

Monthly Salary drjobs

Not Disclosed

drjobs

Salary Not Disclosed

Vacancy

1 Vacancy

Job Description

An experienced researcher in the area of compound semiconductor responsible for development of new and innovative epitaxy design in GaN on Siliocn process technology to achieve best in class linearity and power added efficiency HEMT devices for PA design. The candidate will be responsible for collaboration with foundry and academic partners devising new process flow using TCAD tools design and layout of appropriate test structures and testchip tape out to candidate fabs. The candidate will also be responsible for characterization and measurement of the testchip to verify the targeted performance improvement and publish report and present the result to the team. Upon achieving the performance target the candidate will be responsible for developing a compact model and implements it in PDK for design team to use for design of final product. The candidate will work closely with the design team to achieve the final product tape out.

Responsibilities:

  • Literature search with emphasis on the area of GaN devices on Silicon
  • Perform TCAD simulation using Sentaurus tool from Synopsis to design GaN epitaxy experiments to enhance HEMT performance and reliability
  • Test structure design and layout and tapeout testchip
  • Perform Device characterization using DC CV and RF characterization
  • Perform CW and pulsed IV Sparameter and LoadPull (LP) measurement
  • Perform device level circuit simulation using Cadence and ADS tools
  • Compact model development using CMC standard model for GaN devices.

Qualifications :

  • MS or PHD in EE Physics or Material Science with research focus on GaN epitaxy GaN HEMT or GaAs pHEMT/HBT
  • Good understanding of high band gap GaN or GaAs device physics and fabrication process
  • Good understanding of device reliability issues in IIIV devices
  • Good understanding of GaN or GaAs epitaxy growth process
  • TCAD simulation of high band gap GaN or GaAs devices
  • Experience with measurements techniques such as DC and pulsed IV CV CW and pulsed  Sparameter as well as loadpull characterization
  • Good written/oral communication and project management skills


Additional Information :

The expected annual pay range for this position is $96500 $145000. This position is also eligible for bonus opportunities. Please note that final offer amount will be dependent on geographic location applicable experience and skillset of the candidate.

Renesas offers a full range of elective benefits including medical health savings account (with applicable medical plan) dental vision health and/or dependent care flexible spending accounts pretax commuter benefits life insurance AD&D and pet insurance. In addition to elective benefit options benefited employees receive companypaid life insurance and AD&D LTD short term medical benefits as well as paid sick time paid holidays and accrued paid vacation. New employees will attend a detailed benefit orientation to learn more about our many benefits and resources.

Renesas Electronics Corporation empowers a safer smarter and more sustainable future where technology helps make our lives easier. The leading global provider of microcontrollers Renesas combines our expertise in embedded processing analog power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive industrial infrastructure and IoT applications enabling billions of connected intelligent devices that enhance the way people work and live. Learn more at renesas.com.

Renesas mission To Make Our Lives Easier is underpinned by our company culture TAGIE. TAGIE stands for Transparent Agile Global Innovative and Entrepreneurial. Our goal is to embed this unique culture in everything we do to succeed as a company and create trust with our diverse colleagues customers and stakeholders.

Renesas Electronics is an equal opportunity and affirmative action employer committed to celebrating diversity and fostering a work environment free of discrimination on the basis of sex race religion national origin gender gender identity gender expression age sexual orientation military status veteran status or any other basis protected by federal state or local law.


Remote Work :

No


Employment Type :

Fulltime

Employment Type

Full-time

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